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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT 23 1. BASE S9012LT1 FEATURES TRANSISTORPNP (c) 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W Tamb=25ae(c) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae unless otherwise specified(c) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50m A IC=-500 mA, IB= -50m A VCE=-6V, I = -20mA C 150 40 Test conditions MIN -40 -25 -5 TYP Unit : mm MAX UNIT V V V Ic= -100|I A IE=0 Ic= -1mAIB=0 IE=-100|I AIC=0 VCB=-40 V , IE=0 VCE=-20V , IB=0 VEB= -5V , IC=0 -0.1 -0.1 -0.1 120 350 |I A |I A |I A VCE=-1V, IC= -50m A -0.6 -1.2 V V MHz fT f=30MHz CLASSIFICATION OF h FE(1) Rank Range L 120- 200 H 200- 350 DEVICE MARKING: S9012LT1=2T1 SOT-23 PACKAGE OUTLINE DIMENSIONS D b |E 0.2 E1 E L1 e e1 C A1 A2 Symbol A A1 A2 b c D E E1 e e1 L L1 |E 0.300 0 1.800 0.550REF 0.500 8 0.012 0 Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 2.000 0.071 0.022REF 0.020 8 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 A L Dimensions In Inches Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 |
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